sb520 ? SB5100 features ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanical data ! case: do-201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sb520 sb530 sb540 sb550 sb560 sb580 SB5100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 70 v average rectified output current @t l = 100c (note 1) i o 5.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a forward voltage @i f = 5.0a v fm 0.55 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 50 ma typical junction capacitance (note 2) c j 500 400 pf typical thermal resistance (note 1) r ja 10 c/w operating and storage temperature range t j , t stg -65 to +150 c note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-201ad dim min max a 25.4 ? b 7.20 9.50 c 1.20 1.30 d 4.80 5.30 all dimensions in mm 5.0a axial leaded schottky barrier diode 1of2
0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) 30 60 90 120 150 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r 100 1000 3000 0.1 1.0 10 100 t = 25 c j sb520 - sb540 sb55 0- sb5 10 0 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 125 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 0.001 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f 40 sb550 - sb560 sb520 - sb540 t - 25 c j i pulse width = 300 s f m 0 02550 75 100 125 150 i average forward current (a) (av), t , lead temperature ( c) fig. 1 forward current derating curve l 1 2 4 5 3 resistive or inductive load sb5 8 0- sb5 10 0 2of2
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